3SK321 Hitachi Semiconductor, 3SK321 Datasheet - Page 4

• Manufacturer Part Number: 3SK321
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK321
4
20
16
12
200
150
100
8
4
0
Drain Current vs. Gate1 to Source Voltage
50
0
Gate1 to source voltage V
2.5 V
3.0 V
Ambient Temperature
1
Maximum Channel Power
50
V
Dissipation Curve
G2S
2
2.0 V
1.5 V
1.0 V
= 0.5 V
100
3
V
Pulse test
G1S
DS
150
Ta ( C)
4
= 6 V
(V)
5
200
20
16
12
20
16
12
8
4
0
Drain Current vs. Gate2 to Source Voltage
8
4
0
V
G2S
Drain to source voltage V
Gate2 to source voltage V
Typical Output Characteristics
= 3 V
2
1
2.0 V
V
4
V
2
G1S
G1S
1.2 V
1.5 V
1.0 V
= 0.5 V
= 0.4 V
1.0 V
0.8 V
0.6 V
6
3
V
Pulse test
Pulse test
DS
DS
8
4
G2S
= 6 V
(V)
(V)
10
5