BFU630F NXP Semiconductors, BFU630F Datasheet - Page 2
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BFU630F
Manufacturer Part Number
BFU630F
Description
NPN wideband silicon RF transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BFU630F.pdf
(12 pages)
www.DataSheet.co.kr
NXP Semiconductors
2. Pinning information
3. Ordering information
BFU630F
Product data sheet
1.4 Quick reference data
Table 1.
[1]
[2]
Table 2.
Table 3.
Symbol Parameter
V
V
V
I
P
h
C
f
G
NF
P
Pin
1
2
3
4
Type number
BFU630F
C
T
FE
CBO
CEO
EBO
tot
L(1dB)
CBS
p(max)
T
G
sp
p(max)
is the temperature at the solder point of the emitter lead.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
noise figure
output power at 1 dB
gain compression
is the maximum power gain, if K > 1. If K < 1 then G
Quick reference data
Discrete pinning
Ordering information
Description
emitter
base
emitter
collector
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 1 — 15 December 2010
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Conditions
open emitter
open base
open collector
T
I
T
V
I
f = 2 GHz; T
I
f = 2.4 GHz; T
I
f = 2.4 GHz;
I
Z
f = 2.4 GHz; T
C
C
C
C
C
sp
j
CB
S
= 25 C
= 5 mA; V
= 10 mA; V
= 15 mA; V
= 3 mA; V
= 30 mA; V
= Z
90 C
= 2 V; f = 1 MHz
L
= 50 ;
amb
CE
CE
CE
CE
CE
amb
S
amb
= 2 V;
= 2 V;
=
= 25 C
= 2 V;
= 2 V;
= 2.5 V;
Simplified outline
= 25 C
= 25 C
opt
NPN wideband silicon RF transistor
p(max)
3
2
= Maximum Stable Gain (MSG).
[1]
[2]
1
4
Min
-
-
-
-
-
90
-
-
-
-
-
Typ
-
-
-
3
-
135
47
21
24.5
0.85
11.5
Graphic symbol
BFU630F
© NXP B.V. 2010. All rights reserved.
2
Max
16
5.5
2.5
30
200
180
-
-
-
-
-
mbb159
Version
SOT343F
1, 3
4
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
2 of 12
Datasheet pdf - http://www.DataSheet4U.net/