BFU630F NXP Semiconductors, BFU630F Datasheet - Page 7
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BFU630F
Manufacturer Part Number
BFU630F
Description
NPN wideband silicon RF transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BFU630F.pdf
(12 pages)
www.DataSheet.co.kr
NXP Semiconductors
BFU630F
Product data sheet
Fig 7.
Fig 9.
NF
(dB)
(dB)
G
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(4) f = 1.5 GHz
min
2.0
1.6
1.2
0.8
0.4
50
40
30
20
10
0
0
0
V
Gain as a function of frequency; typical values
0
V
Minimum noise figure as a function of
collector current; typical values
CE
CE
|S21|
MSG
= 2 V; I
= 2 V; T
2
5
2
G
C
amb
p(max)
= 5 mA; T
= 25 C.
10
4
amb
15
6
= 25 C.
(1)
(2)
(3)
(4)
20
All information provided in this document is subject to legal disclaimers.
8
001aam818
001aam820
f (GHz)
I
C
MSG
(mA)
Rev. 1 — 15 December 2010
25
10
Fig 8.
Fig 10. Minimum noise figure as a function of
NF
(dB)
(dB)
G
min
2.0
1.5
1.0
0.5
50
40
30
20
10
0
0
0
Gain as a function of frequency; typical values
0
V
V
frequency; typical values
CE
CE
MSG
|S21|
= 2 V; I
= 2 V; I
2
5
NPN wideband silicon RF transistor
G
2
C
C
p(max)
= 15 mA; T
= 3 mA; T
10
4
amb
amb
15
= 25 C.
= 25 C.
MSG
BFU630F
6
© NXP B.V. 2010. All rights reserved.
20
001aam819
001aam821
f (GHz)
f (GHz)
25
8
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