STB21NM60N- STMicroelectronics, STB21NM60N- Datasheet - Page 3

• Manufacturer Part Number: STB21NM60N-
• Description: N-channel 600 V - 0.17 Ohm - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET
• Manufacturer: STMicroelectronics

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
Table 3.
Table 4.
Symbol
R
Symbol
R
R
Symbol
dv/dt
I
thj-case
thj-amb
I
thj-pcb
E
DM
P
V
SD
I
V
V
T
T
AS
AS
I
I
TOT
T
ISO
DS
GS
stg
D
D
l
j
(2)
(3)
≤ 17 A, di/dt ≤ 480 A/µs, V
Thermal resistance junction-
case max
Thermal resistance junction-
pcb max
Thermal resistance junction-
ambient max
Maximum lead temperature
for soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T
Storage temperature
Max. operating junction temperature
Avalanche characteristics
Parameter
C
j
= 25 °C, I
= 25 °C)
Parameter
Parameter
DD
D
= 80% V
C
= I
= 25 °C
j
GS
max)
AS
, V
= 0)
(BR)DSS
DD
TO-220 D²PAK I²PAK TO-220FP TO-247
C
C
62.5
= 50 V)
= 25 °C
= 100 °C
--
0.89
30
--
I
TO-220/D
2
PAK / TO-247
--
300
140
17
10
68
--
–55 to 150
Max value
2
62.5
PAK
Value
600
±25
150
610
15
8.5
4.21
--
TO-220FP
Electrical ratings
2500
17
10
68
30
(1)
(1)
(1)
0.89
50
--
Unit
V/ns
°C/W
°C/W
°C/W
Unit
Unit
°C
°C
mJ
W
V
V
A
A
A
V
°C
A
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