STB21NM60N- STMicroelectronics, STB21NM60N- Datasheet - Page 4

• Manufacturer Part Number: STB21NM60N-
• Description: N-channel 600 V - 0.17 Ohm - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off on inductive load
Table 6.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
t
t
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
d(on)
d(off)
Q
Q
DSS
GSS
fs
Q
R
oss
t
oss eq
t
rss
iss
gs
gd
r
f
g
g
(1)
(1)
=25°C unless otherwise specified)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
= 0)
DSS
GS
= 0)
V
V
V
V
V
R
(see Figure 23),
(see Figure 18)
V
V
(see Figure 19)
f=1 MHz Gate DC Bias = 0
test signal level = 20 mV
open drain
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
DD
GS
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω V
= 480 V, I
= 10 V
= 15 V
= 50 V, f = 1 MHz,
= 0
= 0, V
= 300 V, I
= 480 V, I
= 10 V,
= Max rating
= Max rating @125 °C
= ± 20 V
= V
= 10 V, I
Test conditions
Test conditions
GS
DS
, I
,
I
GS
D
D
GS
D
D
= 0 to 480 V
D
D
= 250 µA
= 8.5 A
= 17 A,
= 8.5 A
= 0
= 8.5 A
= 10 V
= 17 A,
Min.
Min.
600
2
1900
Value
0.170
Typ.
110
282
Typ.
12
15
22
15
84
31
66
10
33
48
2
3
oss
Max.
0.220
Max.
when V
100
100
1
4
DS
Unit
Unit
V/ns
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
V
V
Ω