STB21NM60N- STMicroelectronics, STB21NM60N- Datasheet - Page 5

• Manufacturer Part Number: STB21NM60N-
• Description: N-channel 600 V - 0.17 Ohm - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET
• Manufacturer: STMicroelectronics

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt=100 A/µs
(see Figure 20)
I
di/dt=100 A/µs,
T
(see Figure 20)
SD
SD
SD
j
= 150 °C
= 17 A, V
Test conditions
= 17 A, V
= 17 A,V
DD
DD
GS
= 100 V
= 100 V
= 0
Electrical characteristics
Min.
Typ.
372
486
4.6
6.3
25
26
Max.
1.5
17
68
Unit
µC
µC
ns
ns
A
A
V
A
A
5/18