MAT12 Analog Devices, MAT12 Datasheet - Page 2

• Manufacturer Part Number: MAT12
• Description: Matched Dual Monolithic Transistor
• Manufacturer: Analog Devices

MAT12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS; V
V
Table 1.
Parameter
Collector-Base Leakage Current
Collector-Collector Leakage Current
Collector-Emitter Leakage Current
CB
Current Gain
Current Gain Match
Noise Voltage Density
Offset Voltage
Offset Voltage Change vs. V
Offset Voltage Change vs. I
Offset Voltage Drift
Breakdown Voltage
Gain-Bandwidth Product
= 15 V, I
O
= 10μA, T
A
= 25°C, unless otherwise specified.
C
CB
Symbol
h
Δh
e
V
ΔV
ΔV
ΔV
BV
f
I
I
I
CBO
CC
CES
T
N
FE
OS
CB
CEO
FE
OS
OS
OS
= 15V
/ΔV
/ΔI
/ΔT
C
CB
Conditions
I
-25ºC≤T
I
-25ºC≤T
I
-25ºC≤T
I
-25ºC≤T
10μA ≤ I
I
V
-25ºC≤T
0 ≤ V
1μA ≤ I
1μA ≤ I
-25ºC≤T
-25ºC≤T
trimmed to zero
I
V
-25ºC≤T
V
-25ºC≤T
V
-25ºC≤T
C
C
C
C
C
C
CB
CB
CC
BE
= 1mA (note 1)
= 100μA
= 10μA
= 1μA
= 1mA, V
= 100mA, V
Rev. PrA | Page 2 of 4
=0 (notes 6,7)
=V
=V
= 0, 1μA ≤ I
f
f
f
f
CB
O
O
O
O
MAX
MAX
C
= 10Hz
= 100Hz
= 1kHz
= 10kHz
C
≤ V
≤ 1mA (note 5),
A
A
A
A
C
A
A
A
A
A
A
≤ 1mA (note 5)
≤+85ºC
≤+85ºC
≤+85ºC
≤+85ºC
≤+85ºC
≤+85ºC
≤+85ºC, V
≤+85ºC
≤+85ºC
≤+85ºC
(notes 6,7)
≤ 1mA (note 2)
MAX
CB
= 0 (note 3)
CE
(note 4)
C
= 10V
≤ 1mA
OS
V
CB
=0
Min
500
325
500
275
400
225
300
200
40
Preliminary Technical Data
Typ
605
590
550
485
0.5
1.6
0.9
0.85
0.85
10
10
5
0.08
0.03
200
25
2
35
3
35
3
Max
2
2
1
1
1
50
70
25
25
0.3
0.3
200
200
200
w
w
Unit
%
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
μV
uV
μV
μV
μV/ ºC
μV/ ºC
V
MHz
pA
nA
pA
nA
pA
nA
w
.
D
a