TIM1011-8L Toshiba Semiconductor, TIM1011-8L Datasheet - Page 2

• Manufacturer Part Number: TIM1011-8L
• Description: MICROWAVE POWER GaAs FET
• Manufacturer: Toshiba Semiconductor

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° C )
PACKAGE OUTLINE (2-11C1B)
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 ° C)
Channel Temperature
Storage Temperature
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
CHARACTERISTICS
TIM1011-8L
2
SYMBOL
V
V
T
T
I
P
DS
DS
GS
stg
ch
T
UNIT
° C
° C
W
V
V
A
Unit in mm
(1) Gate
(2) Source
(3) Drain
-65 to +175
RATING
10.4
175
15
60
-5