2sj537 TOSHIBA Semiconductor CORPORATION, 2sj537 Datasheet
2sj537
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2sj537 Summary of contents
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... Unit V −50 V DSS V −50 V DGR V ±20 V GSS I − − 0 150 ° −55~150 °C stg Symbol Max Unit R 138 ° (ch−a) 1 2SJ537 2 −π−MOSVI) Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1C Weight: 0.36 g (typ.) 2006-11-16 ...
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... DR I — DRP − DSF DR GS Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SJ537 Min Typ. Max Unit — — ±10 μA — — −100 μA −50 — — V −0.8 — ...
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... Gate-source voltage Common source Ta = 25°C Pulse Test 1 0.1 0.01 −100 −0.1 3 2SJ537 I – −5 Common source Ta = 25°C Pulse Test −4 −3.5 − −2.5 V −4 −6 −8 −10 (V) V – ...
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... C rss −0.4 0 −80 −40 −100 −80 Common source − 25°C Pulse Test − −40 −20 0 160 0 4 2SJ537 − −5 − −1 0.4 0.8 1.2 1.6 Drain-source voltage V DS (V) − Common source − −1mA ...
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... Single pulse −0.1 Ta=25℃ Curves must be derated linearly V DSS max with increase in temperature. −0.01 −0.01 −0.1 −1 −10 Drain-source voltage V DS (V) − 10m 100m 1 Pulse width t (S) w 100 μs * −100 5 2SJ537 Duty=t/T Rth(ch-a)=138℃/W 10 100 2006-11-16 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SJ537 20070701-EN 2006-11-16 ...