2sj537 TOSHIBA Semiconductor CORPORATION, 2sj537 Datasheet - Page 4

• Manufacturer Part Number: 2sj537
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1.0
0.8
0.6
0.4
0.2
1000
1.6
1.2
0.4
0.8
0
−80
100
0
10
−0.1
0
Common source
Pulse Test
−40
V GS = 4 V
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
0
Capacitance – V
V GS = 10 V
−1
R
DS (ON)
P
40
D
80
I D = 2.5A
− Ta
− Ta
80
−10
−1.3
DS
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
1.3
120
5
120
−2.5
C iss
C oss
C rss
160
−100
160
4
−100
−2.0
−1.6
−1.2
−0.8
−0.4
−0.1
−80
−60
−40
−20
−10
−1
−80
0
0
0
0
Common source
Ta = 25°C
Pulse Test
−10
Common source
I D = −5 A
Ta = 25°C
Pulse Test
V DS
−40
−3
−5
Drain-source voltage V DS (V)
0.4
Ambient temperature Ta (°C)
−1
Dynamic input / output
Total gate charge Q g (nC)
0
10
characteristics
V GS
I
V
DR
th
−10V
0.8
V GS = 0 V
40
− Ta
− V
DS
80
−20V
20
1.2
Common source
V DS = −10 V
I D = −1mA
Pulse Test
V DD = −40V
120
2006-11-16
1.6
2SJ537
160
30
−20
−15
−10
−5
0