sa8027 NXP Semiconductors, sa8027 Datasheet - Page 7

• Manufacturer Part Number: sa8027
• Description: 2.5 Ghz Low Voltage, Low Power Rf Fractional-n/if Integer Frequency Synthesizer
• Manufacturer: NXP Semiconductors

1. I
2. The relative output current variation is defined as:
Philips Semiconductors
CHARACTERISTICS (continued)
NOTES:
2001 Aug 21
Phase noise (condition R
Interface logic input signal levels
V
V
I
Lock detect output signal (in push/pull mode)
V
V
LEAK
SYMBOL
IH
IL
OL
OH
2.5 GHz low voltage, low power
RF fractional-N/IF integer frequency synthesizer
(f)
SET
I
I
OUT
OUT
+
+ 2
R
V
SET
SET
Synthesizer’s contribution to close-in phase noise
of 900 MHz RF signal at 1 kHz offset.
Synthesizer’s contribution to close-in phase noise
of 1800 MHz RF signal at 1 kHz offset.
Synthesizer’s contribution to close-in phase noise
of 800 MHz RF signal at 1 kHz offset.
Synthesizer’s contribution to close-in phase noise
of 2100 MHz RF signal at 1 kHz offset.
HIGH level input voltage
LOW level input voltage
Input leakage current
LOW level output voltage
HIGH level output voltage
(I
bias current for charge pumps
|I
I
2
2
ZOUT
* I
) I
1
1
)
|
; with I
SET
CURRENT
I
I
I
I
2
1
2
1
PARAMETER
= 7.5 k , CP = 00)
1
@ V
1
+ 0.6 V, I
Figure 5. Relative Output Current Variation
V
2
1
@ V
2
+ V
f
f
f
indicative, not tested
f
f
f
indicative, not tested
logic 1 or logic 0
I
I
REF
REF
COMP
REF
REF
COMP
sink
source
DDCP
= 2 mA
7
= 13MHz, TCXO,
= 13MHz, TCXO,
= 19.44MHz, TCXO,
= 19.44MHz, TCXO,
–0.7 V (See Figure 5.)
CONDITIONS
= 1MHz
= 240kHz
= –2 mA
TDMA
GSM
V
0.7*V
DD
MIN.
–0.3
–0.5
–
–
–
–
–
–0.4
DD
V
2
TYP.
–90
–83
–85
–77
–
–
–
–
–
V
SR00602
PH
VOLTAGE
V
0.3*V
MAX.
DD
+0.5
0.4
–
–
–
–
–
+0.3
SA8027
DD
Product data
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
UNIT
V
V
V
V
A