2sk2882 TOSHIBA Semiconductor CORPORATION, 2sk2882 Datasheet
2sk2882
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2sk2882 Summary of contents
Page 1
... 176 4 150 °C ch −55~150 T °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω 2SK2882 2 -π-MOSV) Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) 2006-11-20 ...
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... Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/μ 2SK2882 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 100 ⎯ ⎯ 150 ⎯ 0.8 2.0 ⎯ 0.09 0.18 ⎯ 0.08 0.12 ⎯ ⎯ ⎯ 1380 ⎯ ...
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... Gate-source voltage V R 1000 Common source 500 Tc = 25°C 300 Pulse test 100 100 0.1 0.3 0.5 Drain current I 3 2SK2882 I – 4 – Common source Tc = 25°C Pulse test ...
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... C iss 3 C oss 2 C rss 1 0 −80 − 100 Dynamic Input/Output Characteristics 160 120 160 0 4 2SK2882 I – − −0.4 −0.8 −1.2 −1.6 Drain-source voltage V ( – Common source ...
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... Pulse width t (s) w 200 160 120 Channel temperature (initial) T 300 15 V −15 V Test circuit = 25 Ω 0 2SK2882 – 100 125 150 (° VDSS Wave form ⎛ ⎞ ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2882 20070701-EN 2006-11-20 ...