2sk2882 TOSHIBA Semiconductor CORPORATION, 2sk2882 Datasheet - Page 4

• Manufacturer Part Number: 2sk2882
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

5000
3000
1000
200
160
120
500
300
100
80
40
50
30
10
60
40
20
−80
0
0.1
0
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
0.3 0.5
Drain-source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
40
Capacitance – V
1
0
R
DS (ON)
P
D
40
80
3
– Tc
5
– Tc
I D = 18 A
10
80
DS
DS
4.5
120
(V)
120
30 50
C oss
C rss
C iss
9
160
100
160
4
100
160
120
50
30
10
80
40
−80
5
3
1
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
Dynamic Input/Output Characteristics
V DS
−40
Drain-source voltage V
−0.4
Total gate charge Q
3
Case temperature Tc (°C)
10
20
5
0
1
V GS
I
DR
V
th
−0.8
40
– V
V GS = 0, −1 V
– Tc
60
40
DS
g
30
Common source
I D = 18 A
Tc = 25°C
Pulse test
80
DS
V DD = 120 V
(nC)
Common source
V DS = 10 V
I D = 1 mA
Pulse test
−1.2
(V)
120
60
2006-11-20
2SK2882
−1.6
160
40
30
20
10
0