2sk3443 TOSHIBA Semiconductor CORPORATION, 2sk3443 Datasheet - Page 4
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2sk3443
Manufacturer Part Number
2sk3443
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK3443.pdf
(6 pages)
30000
10000
5000
3000
1000
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
500
300
100
200
160
120
0.2
0.1
50
30
10
80
40
10
−80
0
0.1
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
40
Drain-source voltage V
Case temperature Tc
Case temperature Tc
1
Capacitance – V
0
R
3
80
DS (ON)
P
D
40
10
– Tc
I D = 30 A
– Tc
120
30
80
DS
DS
I D = 15 A
(°C)
(°C)
100
(V)
160
C oss
C iss
C rss
I D = 7.5 A
120
300
1000
160
200
4
1000
100
200
160
120
10
80
40
−80
1
6
5
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
V DS
10 V
−0.2 −0.4
Dynamic input/output characteristics
5 V
−40
20
Drain-source voltage V
Case temperature Tc
Total gate charge Q
3 V
−0.6 −0.8 −1.0
V GS
0
40
I
V GS = 0 V
DR
V
th
– V
40
60 V
30 V
V DD = 120 V
– Tc
DS
−1.2
60
g
80
Common source
I D = 30 A
Tc = 25°C
Pulse test
DS
−1.4
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
(°C)
(V)
−1.6
80
120
−1.8
2006-11-20
2SK3443
−2.0
160
100
20
16
12
8
4
0