2sk3443 TOSHIBA Semiconductor CORPORATION, 2sk3443 Datasheet - Page 5
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2sk3443
Manufacturer Part Number
2sk3443
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK3443.pdf
(6 pages)
300
100
0.3
0.1
30
10
3
1
1
* Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
Tc = 25°C
I D max (pulsed) *
DC operation
Tc = 25°C
3
Drain-source voltage V
0.01
0.00001
0.1
10
Safe operating area
1
0.2
0.1
Duty = 0.5
0.05
0.02
0.01
10
Single pulse
0.0001
30
DS
1 ms *
V DSS max
(V)
100
100 μs *
0.001
300
Pulse width t
r
th
0.01
– t
5
w
w
R
V
DD
G
(S)
= 25 Ω
= 50 V, L = 773 μH
500
400
300
200
100
−15 V
0
25
15 V
0.1
Test circuit
Channel temperature (initial) Tch (°C)
P DM
Duty = t/T
R th (ch-c) = 1.0°C/W
50
1
t
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
10
Wave form
2
1
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
2006-11-20
B VDSS
2SK3443
150
−
V DD
⎞
⎟
⎟
⎠