irf3710zs International Rectifier Corp., irf3710zs Datasheet - Page 8

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irf3710zs

Manufacturer Part Number
irf3710zs
Description
Automotive Mosfet-hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF3710ZS
Manufacturer:
IR
Quantity:
20 000
IRF3710Z/S/L

8
+
R
-
G
D.U.T
ƒ
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
+
-
xdv/dt controlled by R
xDriver same type as D.U.T.
xI
xD.U.T. - Device Under Test
SD
controlled by Duty Factor "D"
Circuit Layout Considerations
x Low Stray Inductance
xLow Leakage Inductance
xGround Plane
Current Transformer
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
G
HEXFET
t
R
d(on)
Pulse Width dµs
Duty Factor d
+
G
10V
V
GS
V
t
DD
r
V
®
DS
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
D.U.T.
t
d(off)
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
R
V
D
GS
t
P.W.
f
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple d 5%
Body Diode
+
-
Period
V
Body Diode Forward
DD
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V
*

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