irf6713s International Rectifier Corp., irf6713s Datasheet

irf6713s

Manufacturer Part Number

irf6713s

Description

Directfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF6713S.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

irf6713sTR1PBF

Manufacturer:

MICROCHIP

Quantity:

12 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

irf6713sTRPBF

Manufacturer:

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

irf6713sTRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (235Kb)

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-

age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6713SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6713SPbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.

‚

www.irf.com

Absolute Maximum Ratings

RoHS Compliant Containing No Lead and Bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for both Sync.FET and some Control FET

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100% Rg tested

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

application

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance Vs. Gate Voltage

V GS, Gate -to -Source Voltage (V)

T J = 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãg

I D = 22A

Parameter

@ 10V

„

…

†

25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V

21nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

6.0

5.0

4.0

3.0

2.0

1.0

0.0

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

6.3nC

= 25°C, L = 0.23mH, R

I D = 17A

IRF6713STRPbF

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

2.7nC

IRF6713SPbF

V DS = 20V

V DS = 13V

gs2

Max.

170

±20

DS(on)

18nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

14nC

= 17A.

oss

DS(on)

Units

1.9V

09/04/07

gs(th)

Related parts for irf6713s

irf6713s Summary of contents

Page 1

... The IRF6713SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 ...

Page 5

150° 25° -40° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL CODE ...

Page 9

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered ...

Related keywords

irf6713s datasheet
irf6713s data sheet
irf6713s pdf datasheet
irf6713s component
irf6713s part
irf6713s distributor
irf6713s RoHS
irf6713s datasheet download