irfr6215 International Rectifier Corp., irfr6215 Datasheet - Page 2

• Manufacturer Part Number: irfr6215
• Description: -150v Single P-channel Hexfet Power Mosfet In A D-pak Package
• Manufacturer: International Rectifier Corp.

Electrical Characteristics @ T
IRFR/U6215
Source-Drain Ratings and Characteristics
Notes:
L
** When mounted on 1" square PCB (FR-4 or G-10 Material )
R
I
V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
D
V
S
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Starting T
2
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
= 25 , I
-6.6A, di/dt
175°C
/ T
J
J
= 25°C, L = 14mH
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= -6.6A. (See Figure 12)
-620A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Pulse width
This is applied for I-PAK, L
Uses IRF6215 data and test conditions
center of die contact
Min.
-150
–––
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.20 –––
Typ. Max. Units
–––
––– 0.295
––– 0.58
–––
–––
––– -250
–––
–––
860
220
–––
––– -100
–––
–––
130
–––
–––
–––
160
7.5
4.5
1.2
14
36
53
37
300µs; duty cycle
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.6
240
-25
8.1
1.7
–––
66
35
-44
-13
V/°C Reference to 25°C, I
nC
nH
µA
nA
pF
µC
ns
ns
V
V
S
V
S
A
of D-PAK is measured between lead and
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
2%
= -6.6A
= -6.6A
= 25°C, I
= 25°C, I
= 12
= 6.8
= V
= -50V, I
= -150V, V
= -120V, V
= -120V
= -75V
= -25V
= 0V, I
= -10V, I
= -10V, I
= 20V
= -20V
= -10V, See Fig. 6 and 13
= 0V
GS
, I
See Fig. 10
D
S
F
D
Conditions
D
= -250µA
D
D
Conditions
= -6.6A, V
= -6.6A
= -250µA
= -6.6A
= -6.6A
= -6.6A
GS
GS
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
T
J
G
J
= 0V
= 150°C
= 150°C
G
S
+L
D
)
D
S
S
D