tpd4135k TOSHIBA Semiconductor CORPORATION, tpd4135k Datasheet - Page 8
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tpd4135k
Manufacturer Part Number
tpd4135k
Description
High Voltage Monolithic Silicon Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPD4135K.pdf
(23 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPD4135K
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Absolute Maximum Ratings
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Power supply voltage
Output current (DC)
Output current (pulse 1ms)
Input voltage
V
DIAG voltage
DIAG current
Power dissipation
(IGBT 1 phase (Tc = 25°C) )
Power dissipation
(FRD1 phase (Tc = 25°C) )
Operating junction temperature
Junction temperature
Storage temperature
REG
current
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
P
P
Symbol
V
(Ta = 25°C)
C(IGBT)
I
C(FRD)
I
T
V
I
DIAG
V
T
REG
I
V
DIAG
outp
out
jopr
T
BB
CC
stg
IN
j
-40 to 135
-55 to 150
-0.5 to 7
Rating
500
150
18
50
20
20
40
26
3
6
8
Unit
mA
mA
°C
°C
°C
W
W
V
V
A
A
V
V
TPD4135K
2010-09-27