s29gl128n Meet Spansion Inc., s29gl128n Datasheet - Page 52

• Manufacturer Part Number: s29gl128n
• Description: 3.0 Volt-only Page Mode Flash Memory Featuring 110 Nm Mirrorbit ?rocess Technology
• Manufacturer: Meet Spansion Inc.

Command Definitions
50
Reading Array Data
Reset Command
Writing specific address and data commands or sequences into the command register initiates
device operations.
command sequences. Writing incorrect address and data values or writing them in the im-
proper sequence may place the device in an unknown state. A reset command is then
required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data
is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Char-
acteristics section for timing diagrams.
The device is automatically set to reading array data after device power-up. No commands
are required to retrieve data. The device is ready to read array data after completing an Em-
bedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-sus-
pend-read mode, after which the system can read data from any non-erase-suspended
sector. After completing a programming operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Re-
sume Commands section for more information.
The system must issue the reset command to return the device to the read (or erase-sus-
pend-read) mode if DQ5 goes high during an active program or erase operation, or if the
device is in the autoselect mode. See the next section, Reset Command, for more
information.
See also
The Read-Only Operations subsection in the
provides the read parameters, and
Writing the reset command resets the device to the read or erase-suspend-read mode. Ad-
dress bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command se-
quence before erasing begins. This resets the device to the read mode. Once erasure begins,
however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command se-
quence before programming begins. This resets the device to the read mode. If the program
command sequence is written while the device is in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to the
read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writ-
ing the reset command returns the device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the
device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must
write the Write-to-Buffer-Abort Reset command sequence to reset the device for the next
operation.
“Requirements for Reading Array Data” section on page 14
T able 12 on page 63
S29GL-N MirrorBit™ Flash Family
Figure 11, on page 78
D a t a
and
“AC Characteristics” section on page 77
T able 14 on page 65
S h e e t
shows the timing diagram.
define the valid register
for more information.
S29GL-N_00_B3 October 13, 2006
section