s29gl128n Meet Spansion Inc., s29gl128n Datasheet - Page 65

• Manufacturer Part Number: s29gl128n
• Description: 3.0 Volt-only Page Mode Flash Memory Featuring 110 Nm Mirrorbit ?rocess Technology
• Manufacturer: Meet Spansion Inc.

S29GL-N_00_B3 October 13, 2006
Legend:
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the falling edge of WE#
or CE# pulse, whichever occurs later.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =
Asynchronous Read (6)
Reset (7)
CFI Query (11)
Program
Write to Buffer (12)
Program Buffer to Flash
Write to Buffer Abort Reset (13)
Chip Erase
Sector Erase
Erase/Program Suspend (15)
Erase/Program Resume (16)
See
All values are in hexadecimal.
Shaded cells indicate read cycles.
Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return reading
array data.
No unlock or command cycles required when bank is reading
array data.
Reset command is required to return to reading array data in
certain cases. See
Data in cycles 5 and 6 are listed in
The data is 00h for an unprotected sector and 01h for a
protected sector. PPB Status Read provides the same data but in
inverted form.
0, region is unserialized and unprotected when shipped from
factory. See
page 43 for more information.
Table 1
Command Sequence
Manufacturer ID
Device ID (8)
Sector Protect Verify (9)
Secure Device Verify (10)
Entry
Program (14)
Sector Erase (14)
Chip Erase (14)
Reset
Entry
Program (17)
Read (17)
Exit (17)
Command Definitions
(Notes)
on page 13 for description of bus operations.
Secured Silicon Sector Flash Memory Region
Reset Command
1
1
4
6
4
4
1
4
6
1
3
3
2
2
2
2
6
6
1
1
3
4
1
4
Table 5
section for details.
Table 12.
Addr
XXX
XXX
XXX
XXX
XXX
XXX
XXX
555
555
555
555
555
555
555
555
555
555
555
555
555
RA
55
SA
00
D a t a
on page 37.
First
S29GL-N MirrorBit™ Flash Family
Data
Data
RD
AA
AA
AA
AA
98
AA
AA
29
AA
AA
A0
80
80
90
AA
AA
B0
30
AA
AA
AA
F0
Memory Array Commands (x16)
S h e e t
Addr
XXX
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
on
PA
SA
SA
Second
Data
55
55
55
55
55
55
55
55
PD
30
10
00
55
55
55
55
55
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. Any address that falls within a specified sector.
See Tables
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
11. Command is valid when device is ready to read array data or
12. Total number of cycles in the command sequence is determined
13. Command sequence resets device for next command after
14. Requires Entry command sequence prior to execution. Unlock
15. System may read and program in non-erasing sectors, or enter
16. Erase Resume command is valid only during the Erase Suspend
17. Requires Entry command sequence prior to execution. Secured
when device is in autoselect mode.
by the number of words written to the write buffer.
write-to-buffer operation.
Bypass Reset command is required to return to reading array
data.
the autoselect mode, when in the Erase Suspend mode. The
Erase Suspend command is valid only during a sector erase
operation.
mode.
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
Addr
555
555
555
555
555
555
555
555
555
555
555
555
PA
Bus Cycles (Notes 1–5)
Third
2–4
Data
90
90
90
90
A0
25
20
80
80
88
A0
90
F0
for sector address ranges.
[SA]X02
Addr
X00
X01
X03
XXX
555
555
SA
PA
PA
Fourth
Data
227E
Data
Data
WC
PD
AA
AA
PD
01
00
Addr
X0E
2AA
2AA
PA
Fifth
Data
Data
PD
55
55
Addr
WBL
X0F
555
SA
Sixth
Data
Data
PD
10
30
63