s29jl064j Meet Spansion Inc., s29jl064j Datasheet - Page 56

• Manufacturer Part Number: s29jl064j
• Description: 64 Megabit 8m X 8-bit/4m X 16-bit Cmos 3.0 Volt-only, Simultaneous Read/write Flash Memory
• Manufacturer: Meet Spansion Inc.

18. Erase and Programming Performance
19. Pin Capacitance
56
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V V
2. Under worst case conditions of 90°C, V
3. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
4. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
5. The device has a minimum program and erase cycle endurance of 100,000 cycles per sector.
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
Sector Erase Time
Chip Erase Time
Byte Program Time
Word Program Time
Accelerated Byte/Word Program Time
Parameter Symbol
on page 36
C
C
C
OUT
IN2
IN
for further information on command definitions.
Parameter
A
= 25°C, f = 1.0 MHz.
(applies to CE#, WE#, OE#, WP#/ACC, RESET#, BYTE#)
Output Capacitance (applies to DQ15-DQ0, RY/BY#)
Input Capacitance (applies to A21-A0, DQ15-DQ0)
CC
= 2.7V, 1,000,000 cycles.
Control Pin Capacitance
S29JL064J
Parameter Description
Typ
(Note 1)
D a t a
0.5
71
6
6
4
Max
S h e e t
150
150
(Note 2)
70
5
CC
, 100,000 cycles; checkerboard data pattern.
Unit
sec
sec
µs
µs
µs
S29JL064J_00_03 April 7, 2011
Test Setup
V
V
V
Excludes 00h programming
OUT
IN
IN
prior to erasure
Excludes system level
= 0
= 0
overhead
= 0
Comments
(Note 4)
Max
8.5
5.5
12
(Note 3)
Table 10.1
Unit
pF
pF
pF