mt3s06t TOSHIBA Semiconductor CORPORATION, mt3s06t Datasheet
mt3s06t
Manufacturer Part Number
mt3s06t
Description
Toshiba Transistor Silicon Npn Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.MT3S06T.pdf
(5 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
mt3s06t(T5LALPSS
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
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Part Number:
mt3s06t(TE85L,F)
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Part Number:
mt3s06t(TE85L,F)
Manufacturer:
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Quantity:
20 000
VHF~UHF Band Low Noise Amplifier Applications
•
•
Absolute Maximum Ratings
Marking
Low noise figure: NF = 1.6dB (V
High gain: |S
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
21e
|
2
= 9.5dB (V
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
CE
CE
= 3 V, I
(Ta = 25°C)
= 3 V, I
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
MT3S06T
C
B
C
j
C
C
= 7 mA, f = 2 GHz)
= 3 mA, f = 2 GHz)
−55~125
Rating
125
1.5
10
15
60
5
7
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.0022 g (typ.)
JEDEC
JEITA
TOSHIBA
2-1B1A
MT3S06T
2007-11-01
―
―
Unit: mm