mt3s06t TOSHIBA Semiconductor CORPORATION, mt3s06t Datasheet - Page 2
mt3s06t
Manufacturer Part Number
mt3s06t
Description
Toshiba Transistor Silicon Npn Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.MT3S06T.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mt3s06t(T5LALPSS
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
mt3s06t(TE85L,F)
Manufacturer:
TI
Quantity:
93
Part Number:
mt3s06t(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Microwave Characteristics
Electrical Characteristics
Caution
This device is sensitive to electrostatic discharge. Please handle with caution.
Transition frequency
Insertion gain
Noise figure
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Note: C
re
Characteristics
Characteristics
is measured by 3 terminal method with capacitance bridge.
(Ta = 25°C)
(Ta = 25°C)
⎪S
⎪S
Symbol
Symbol
NF (1)
NF (2)
21e
21e
I
I
CBO
EBO
h
C
f
FE
T
re
⎪
⎪
2
2
(1)
(2)
V
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CE
CB
EB
CE
CB
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
2
C
C
C
C
C
C
E
C
E
Test Condition
Test Condition
= 0
= 0
= 0, f = 1 MHz
= 5 mA
= 5 mA, f = 2 GHz
= 7 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 5 mA
(Note)
Min
Min
6.5
70
⎯
⎯
⎯
⎯
⎯
⎯
7
Typ.
Typ.
0.25
8.5
9.5
1.7
1.6
10
⎯
⎯
⎯
MT3S06T
2007-11-01
Max
Max
140
0.1
0.7
⎯
⎯
⎯
3
3
1
GHz
Unit
Unit
dB
dB
μA
μA
pF