s908gr32ag3vfa Freescale Semiconductor, Inc, s908gr32ag3vfa Datasheet - Page 45

• Manufacturer Part Number: s908gr32ag3vfa
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

2.6.4 FLASH-1 Mass Erase Operation
Use this step-by-step procedure to erase the entire FLASH-1 memory:
A. Programming and erasing of FLASH locations can not be performed by code being executed from the
B. While these operations must be performed in the order shown, other unrelated operations may occur
C. It is highly recommended that interrupts be disabled during program/erase operations.
Freescale Semiconductor
10. Wait for a time, t
1. Set both the ERASE bit and the MASS bit in the FLASH-1 control register (FL1CR).
2. Read the FLASH-1 block protect register (FL1BPR).
3. Write to any FLASH-1 address within the FLASH-1 array with any data.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
same FLASH array.
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
Mass erase is disabled whenever any block is protected (FL1BPR does not
equal $FF).
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
RCV
NVS
MERASE
NVHL
, (typically 1 μs) after which the memory can be accessed in normal read mode.
(minimum 10 μs).
(minimum 100 μs).
(minimum 4 ms).
NOTE
NOTE
FLASH-1 Memory (FLASH-1)
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