mt46v128m8p-6t Micron Semiconductor Products, mt46v128m8p-6t Datasheet - Page 72

• Manufacturer Part Number: mt46v128m8p-6t
• Description: 1gb Ddr Sdram Component
• Manufacturer: Micron Semiconductor Products

Figure 44:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Command
Address
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
1. DI b = data-in for column b.
2. Subsequent element of data-in is applied in the programmed order following DI b.
3. An interrupted burst of 8 is shown; two data elements are written.
4.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. DQS is required at T4 and T4n (nominal case) to register DM.
7. If the burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n.
t
WR is referenced from the first positive CK edge after the last data-in pair.
DI
b
NOP
DI
T1
b
DI
b
T1n
NOP
T2
T2n
72
t WR
NOP
T3
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T3n
(a or all)
Bank,
PRE
T4
1Gb: x4, x8, x16 DDR SDRAM
T4n
Transitioning Data
T5
NOP
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t RP
Operations
T6
NOP
Don’t Care