mt46h8m16lfcf-75-it Micron Semiconductor Products, mt46h8m16lfcf-75-it Datasheet - Page 55
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mt46h8m16lfcf-75-it
Manufacturer Part Number
mt46h8m16lfcf-75-it
Description
128mb Mobile Ddr Sdram Mt46h4m32lfb5-6
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H8M16LFCF-75-IT.pdf
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Figure 26:
PDF: 09005aef8331b3e9 / Source: 09005aef8331b3ce
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. B 06/08 EN
Command
Command
Address
Address
READ-to-WRITE
DQS
DQS
CK#
CK#
DM
DM
DQ
DQ
CK
CK
Notes:
READ
Bank,
Col n
READ
Bank,
Col n
1. D
2. D
3. BL = 4 in the cases shown (applies for bursts of 8 and 16as well; if BL = 2, the BST command
4. Shown with nominal
5. BST = BURST TERMINATE command; page remains open.
6. CKE = HIGH.
T0
T0
shown can be a NOP).
OUT
IN
b = data-in from column b.
n = data-out from column n.
CL = 2
BST
BST
T1
T1
5
5
CL = 3
T1n
t
AC,
D
OUT
n
NOP
T2
NOP
T2
t
DQSCK, and
55
D
n + 1
T2n
T2n
OUT
D
OUT
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
NOP
Bank,
t
Col b
T3
T3
128Mb: x16, x32 Mobile DDR SDRAM
DQSQ.
D
n + 1
t
(NOM)
OUT
DQSS
T3n
T3n
Don’t Care
WRITE
Bank,
T4
Col b
D
T4
NOP
b
IN
t
(NOM)
DQSS
T4n
T4n
b+1
D
IN
Transitioning Data
©2007 Micron Technology, Inc. All rights reserved.
D
Timing Diagrams
b+2
T5
D
NOP
T5
NOP
b
IN
IN
b + 1
T5n
T5n
b+3
D
D
IN
IN
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