mt45w2mw16pga Micron Semiconductor Products, mt45w2mw16pga Datasheet - Page 19

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mt45w2mw16pga

Manufacturer Part Number
mt45w2mw16pga
Description
32mb 2 Meg X 16 Async/page Cellularram 1.0 Memory
Manufacturer
Micron Semiconductor Products
Datasheet

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0
Figure 13:
Table 7:
Table 8:
Figure 14:
PDF: 09005aef82832fa7 / Source: 09005aef82832f97
32mb_asyncpage_cr1_0_p24z_2.fm - Rev. B 5/07 EN
Description
Description
Deep power-down
Input capacitance
Input/output capacitance (DQ)
Deep Power-Down Specifications and Conditions
Capacitance Specifications and Conditions
Typical Refresh Current vs. Temperature
AC Input/Output Reference Waveform
Notes:
Notes:
1. These parameters are verified in device characterization and are not 100-percent tested.
Input
1. AC test inputs are driven at V
2. Input timing begins at V
3. Output timing ends at V
V
V
SS
times (10 percent to 90 percent) < 1.6ns.
the input test point may not be shown to scale.
60
50
40
30
20
70
10
CC
Q
0
1
T
C
= +25ºC; f = 1 MHz;
V
Conditions
CC
V
/2
IN
2
32Mb: 2 Meg x 16 Async/Page CellularRAM 1.0 Memory
V
= 0V
IN
= V
Conditions
CC
CR[4] = 0
ZZ# = 0V
Q or 0V; +25°C
CC
CC
/2. Due to the possibility of a difference between V
Q/2.
Temperature (°C)
19
CC
Symbol
Q for a logic 1 and V
Test Points
C
C
IN
IO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
2.0
3.0
Symbol
SS
I
ZZ
Q for a logic 0. Input rise and fall
Electrical Characteristics
Max
V
6.5
6.5
CC
Q/2
©2007 Micron Technology, Inc. All rights reserved.
3
TYP
Output
10
Units
pF
pF
CC
and V
Units
PAR FULL
PAR 1/2
PAR 1/4
PAR 0
Notes
µA
1
1
CC
Q,

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