mt45w2mw16pga Micron Semiconductor Products, mt45w2mw16pga Datasheet - Page 21

no-image

mt45w2mw16pga

Manufacturer Part Number
mt45w2mw16pga
Description
32mb 2 Meg X 16 Async/page Cellularram 1.0 Memory
Manufacturer
Micron Semiconductor Products
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mt45w2mw16pga-70 IT
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
mt45w2mw16pga-70 IT
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
mt45w2mw16pga-70 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
mt45w2mw16pga-70 IT
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
mt45w2mw16pga-70 IT
Quantity:
5 000
Part Number:
mt45w2mw16pga-70 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
mt45w2mw16pga-70 WT
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
mt45w2mw16pga-70 WT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
mt45w2mw16pga-70IT
0
Table 10:
Table 11:
Table 12:
PDF: 09005aef82832fa7 / Source: 09005aef82832f97
32mb_asyncpage_cr1_0_p24z_2.fm - Rev. B 5/07 EN
Parameter
Description
Description
Address setup time
Address valid to end of write
Byte select to end of write
CE# HIGH time during write
Chip enable to end of write
Data hold from write time
Data write setup time
Chip enable to Low-Z output
End write to Low-Z output
WRITE cycle time
Write to High-Z output
Write pulse width
Write pulse width HIGH
Write recovery time
Address setup time
Address valid to end of write
Chip deselect to ZZ# LOW
Chip enable to end of write
WRITE cycle time
Write pulse width
Write recovery time
ZZ# LOW to WE# LOW
Chip deselect to ZZ# LOW
Deep power-down recovery
Minimum ZZ# pulse width
WRITE Cycle Timing Requirements
Load Configuration Register Timing Requirements
Deep Power-Down Timing Requirements
Notes:
1. High-Z to Low-Z timings are tested with the circuit shown in Figure 15 on page 20. The Low-
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 15 on page 20. The
3. WE# LOW time must be limited to
Z timings measure a 100mV transition away from the High-Z (V
V
High-Z timings measure a 100mV transition from either V
OH
or V
OL
.
32Mb: 2 Meg x 16 Async/Page CellularRAM 1.0 Memory
Symbol
t
t
t
Symbol
t
t
t
t
t
t
t
t
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CDZZ
R
ZZ (MIN)
AS
AW
CDZZ
CW
WC
WP
WR
ZZWE
AS
AW
BW
CPH
CW
DH
DW
LZ
OW
WC
WHZ
WP
WPH
WR
21
t
CEM (8µs).
Min
70
70
70
23
10
70
46
10
0
5
0
5
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
Min
150
70
70
70
40
10
10
0
5
0
5
–70
–70
–70
Max
8
Electrical Characteristics
OH
or V
CC
©2007 Micron Technology, Inc. All rights reserved.
Max
Max
OL
500
Q/2) level toward either
toward V
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
1
1
2
3

Related parts for mt45w2mw16pga