tc55vcm216astn40 TOSHIBA Semiconductor CORPORATION, tc55vcm216astn40 Datasheet - Page 12
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tc55vcm216astn40
Manufacturer Part Number
tc55vcm216astn40
Description
Tentative Toshiba Digital Integrated Circuit Silicon Gate Cmos
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TC55VCM216ASTN40.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC55VCM216ASTN40
Manufacturer:
TOSHIBA
Quantity:
1 400
Part Number:
TC55VCM216ASTN40
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Note:
(1)
(2)
(3)
(4)
(5)
In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V.
In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V or
CE2 ≥ V
When CE1 is operating at the V
transition of V
In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when CE1
≤ 0.2 V or CE1 ≥ V
When UB (or LB ) is operating at the V
the transition of V
DD
− 0.2 V.
DD
from 2.3(2.7) to 2.2V(2.4 V).
DD
DD
from 2.3(2.7) to 2.2V(2.4 V).
− 0.2 V, CE2 ≤ 0.2 V or CE2 ≥ V
IH
(min.) level, the operating current is given by I
IH
(min.) level, the operating current is given by I
DD
− 0.2 V.
TC55VCM216ASTN40,55
2002-07-04 12/14
DDS1
DDS1
during the
during