tc55vcm216astn40 TOSHIBA Semiconductor CORPORATION, tc55vcm216astn40 Datasheet - Page 12

• Manufacturer Part Number: tc55vcm216astn40
• Description: Tentative Toshiba Digital Integrated Circuit Silicon Gate Cmos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Note:
(1)
(2)
(3)
(4)
(5)
In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V.
In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V or
CE2 ≥ V
When CE1 is operating at the V
transition of V
In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when CE1
≤ 0.2 V or CE1 ≥ V
When UB (or LB ) is operating at the V
the transition of V
DD
− 0.2 V.
DD
from 2.3(2.7) to 2.2V(2.4 V).
DD
DD
from 2.3(2.7) to 2.2V(2.4 V).
− 0.2 V, CE2 ≤ 0.2 V or CE2 ≥ V
IH
(min.) level, the operating current is given by I
IH
(min.) level, the operating current is given by I
DD
− 0.2 V.
TC55VCM216ASTN40,55
2002-07-04 12/14
DDS1
DDS1
during the
during