hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 10
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hyb18m1g16
Manufacturer Part Number
hyb18m1g16
Description
Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
Manufacturer
Qimonda
Datasheet
1.HYB18M1G16.pdf
(65 pages)
- Current page: 10 of 65
- Download datasheet (3Mb)
1. At first, device core power (
2. After
3. Wait for 200µs while issuing NOP or DESELECT commands.
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least tRFC period.
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode Register, each
Following these steps, the DDR Mobile-RAM is ready for normal operation.
Rev.1.0, 2007-03
10242006-Y557-TZXW
are driven from a single power converter output.
Assert and hold CKE to a HIGH level.
followed by NOP or DESELECT commands for at least tMRD period; the order in which both registers are programmed is
not important.
V
DD
and
V
DDQ
are stable and CKE is HIGH, apply stable clocks.
V
DD
) and device IO power (
V
DDQ
10
) must be brought up simultaneously. Typically
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
t
RP
period.
V
DD
Data Sheet
and
V
DDQ
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