hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 40
hyb18m1g16
Manufacturer Part Number
hyb18m1g16
Description
Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
Manufacturer
Qimonda
Datasheet
1.HYB18M1G16.pdf
(65 pages)
- Current page: 40 of 65
- Download datasheet (3Mb)
Rev.1.0, 2007-03
10242006-Y557-TZXW
Command
Address
DI b = Data In to column b .
An interrupted burst of 4, 8 or 16 is shown, 2 data elements are written.
t
A10 is LOW with the WRITE command (Auto Precharge is disabled)
*1 = can be Don't Care for programmed burst length of 4
*2 = for programmed burst length of 4, DQS becomes Don't Care at this point
WR
DQS
is referenced from the positive clock edge after the last desired Data In pair.
DM
DQ
CK
CK
BA,Col b
WRITE
t
DQSSmax
NOP
Di b
NOP
40
Interrupting WRITE to PRECHARGE (max. t
NOP
t
WR
*2
*1
*1
(or all)
BA a
PRE
HY[B/E]18M1G16[0/1]BF
*1
1-Gbit DDR Mobile-RAM
*1
FIGURE 31
= Don't Care
NOP
Data Sheet
DQSS
)
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