hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 37

• Manufacturer Part Number: hyb18m1g16
• Description: Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
• Manufacturer: Qimonda

2.4.7.1
Data for any WRITE burst may be followed by a subsequent READ command. To follow a WRITE without truncating the WRITE
burst,
Data for any WRITE burst may be truncated by a subsequent READ command, as shown in
in pairs that are registered prior to the
with DM, as shown in
Rev.1.0, 2007-03
10242006-Y557-TZXW
Command
Address
DI b = Data In to column b .
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
t
A10 is LOW with the WRITE command (Auto Precharge is disabled)
The READ and WRITE commands are to the same device but not necessarily to the same bank.
WTR
t
WTR
DQS
DQ
DM
is referenced from the positive clock edge after the last Data In pair.
CK
CK
(WRITE to READ) should be met as shown in
BA,Col b
WRITE
WRITE to READ
Figure
t
DQSSmax
29.
NOP
t
WTR
Di b
period are written to the internal array, and any subsequent data-in must be masked
NOP
Figure
37
28.
NOP
Non-Interrupting WRITE to READ (max. t
t
WTR
BA,Col n
READ
CL=3
Figure
NOP
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
29. Note that only the data-
FIGURE 28
= Don't Care
NOP
Data Sheet
DQSS
)