hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 4
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hyb18m1g16
Manufacturer Part Number
hyb18m1g16
Description
Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
Manufacturer
Qimonda
Datasheet
1.HYB18M1G16.pdf
(65 pages)
- Current page: 4 of 65
- Download datasheet (3Mb)
1) HYB / HYE: Designator for memory products (HYB: standard temp. range; HYE: extended temp. range)
Rev.1.0, 2007-03
10242006-Y557-TZXW
Item
Banks
Rows
Columns
Type
Commercial Temperature Range
HYB18M1G160BF-6
HYB18M1G161BF-6
HYB18M1G160BF-7.5
HYB18M1G161BF-7.5
Extended Temperature Range
HYE18M1G160BF-6
HYE18M1G161BF-6
HYE18M1G160BF-7.5
HYE18M1G161BF-7.5
18M: 1.8V DDR Mobile-RAM
1G: 1Gbit density
160: 16 bit interface width; DDR-Mobile-RAM - One CKE (CKE)
161: 16 bit interface width; DDR-Mobile-RAM - Two CKE (CKE0 and CKE1)
B: die revision
F: green product
- 6/-7.5: speed grades (min. clock cycle time)
1)
Description
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
166 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, one CKE (CKE)
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR Mobile-RAM, two CKE (CKE0 and CKE1)
4
Addresses
BA0, BA1
A0 - A12
A0 - A9
Memory Addressing Scheme
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
Ordering Information
TABLE 2
TABLE 3
Data Sheet
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