tza3034 NXP Semiconductors, tza3034 Datasheet - Page 20

• Manufacturer Part Number: tza3034
• Description: Sdh/sonet Stm1/oc3 Postamplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 1 Physical characteristics of bare die
1999 Nov 03
handbook, full pagewidth
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attache temperature
Attache time
SDH/SONET STM1/OC3 postamplifier
(1) Typical value.
PARAMETER
1.55
mm
2.1 m PSG (PhosphoSilicate Glass) on top of 0.65 m oxynitride
minimum dimension of exposed metallization is 90
1.22 m W/AlCu/TiW
380 m nominal
1.55
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attache is glue
<15 s
(1)
AGND
AGND
AGND
V CCA
DINQ
TEST
DIN
n.c.
1.55 mm (2.4 mm
Fig.26 Bonding pad locations of TZA3034U.
10
11
4
5
6
7
8
9
12
3
13
2
2
14
1
)
x
TZA3034U
1.55
20
15
32
0
y
0
(1)
16
31
mm
17
30
VALUE
18
29
28
19
MGR283
27
26
25
24
23
22
20
21
90 m (pad size = 100
V CCD
TEST
DGND
DOUT
DOUTQ
DGND
TEST
DGND
Product specification
TZA3034
100 m)