pip3103-t NXP Semiconductors, pip3103-t Datasheet - Page 4

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pip3103-t

Manufacturer Part Number
pip3103-t
Description
Pip3103-t Powermos Transistor Logic Level Topfet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SWITCHING CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUE
REVERSE DIODE CHARACTERISTICS
Limits are for -40˚C
1 Trip time t
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 2001
PowerMOS transistor
Logic level TOPFET
SYMBOL PARAMETER
I
P
T
T
a
SYMBOL PARAMETER
t
t
t
t
SYMBOL PARAMETER
I
SYMBOL PARAMETER
V
t
D
d on
r
d off
f
S
rr
DSC
j(TO)
D(TO)
= 25˚C; resistive load R
SDO
d sc
varies with overload dissipation P
Overload protection
Drain current limiting
Short circuit load protection
Overload power threshold
Characteristic time
Overtemperature protection
Threshold junction temperature V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Continuous forward current
Forward voltage
Reverse recovery time
T
mb
L
150˚C; typicals are for T
= 50 ; adjust V
D
according to the formula t
DD
to obtain I
CONDITIONS
-40˚C
V
V
V
V
for protection to operate
which determines trip time
from I
CONDITIONS
V
V
CONDITIONS
I
not applicable
S
IS
IS
IS
IS
IS
IS
IS
= 2 A; V
: 0 V
: 5 V
= 5 V
= 4.5 V
= 4 V to 5.5 V
= 5 V
= 4 V to 5.5 V
mb
D
CONDITIONS
T
= 25˚C unless otherwise specified
T
mb
280 mA or V
j
D
IS
4
5 V
0 V
= 250 mA; refer to test circuit and waveforms
= 0 V; t
150˚C
25 ˚C; V
d sc
2
T
DSC
p
IS
= 300 s
DS
/ [ P
= 0 V
D
1
100 mV
/ P
D(TO)
- 1 ].
MIN.
MIN.
MIN.
150
0.8
0.7
0.6
MIN.
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
0.83
165
1.3
1.6
17
11
25
14
5
-
-
-
Product specification
MAX.
2
PIP3103-T
MAX.
MAX.
MAX.
1.7
1.8
1.1
12
30
65
35
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
UNIT
A
ms
˚C
W
A
A
A
V
-
s
s
s
s

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