km416rd8ac Samsung Semiconductor, Inc., km416rd8ac Datasheet - Page 4

• Manufacturer Part Number: km416rd8ac
• Description: 128/144mbit Rdram 256k X 16/18 Bit X 2*16 Dependent Banks Direct Rdramtm
• Manufacturer: Samsung Semiconductor, Inc.

KM416RD8AC(D)/KM418RD8AC(D)
Overview
The Rambus Direct RDRAM™ is a general purpose high-
performance memory device suitable for use in a broad
range of applications including computer memory, graphics,
video, and any other application where high bandwidth and
low latency are required.
The 128/144-Mbit Direct Rambus DRAMs (RDRAM ) are
extremely high-speed CMOS DRAMs organized as 8M
words by 16 or 18 bits. The use of Rambus Signaling Level
(RSL) technology permits 600MHz to 800MHz transfer
rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10ns per
sixteen bytes).
The architecture of the Direct RDRAMs allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's thirty-two
banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
Highest sustained bandwidth per DRAM device
Low latency features
Advanced power management:
Organization: 1Kbyte pages and 32 banks, x 16/18
Uses Rambus Signaling Level (RSL) for up to 800MHz
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized
- Separate row and column control buses for
- 32 banks: four transactions can take place simul-
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
- Direct RDRAM operates from a 2.5 volt supply
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
- x18 organization allows ECC configurations or
- x16 organization for low cost applications
operation
efficiency
easy scheduling and highest performance
taneously at full bandwidth data rates
increased storage/bandwidth
Page 1
The 128/144-Mbit Direct RDRAMs are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
a.The “32s"designation indicates that this RDRAM core is composed of 32
banks which use a "split" bank architecture.
b.The “C“ designator indicates the normal package and the “D“ indicates the
mirrored package.
c.The “R“ designator indicates that this RDRAM core uses Normal Power
Self Refresh.
Organization
256Kx16x32s
256Kx18x32s
a. Normal Package
Figure 1: Direct RDRAM CSP Package
KM4xxRD8AC
SEC KOREA
a
-RG60
-RG60
-RK70
-RK80
-RK70
-RK80
Bin
Freq.
Speed
MHz
600
711
800
600
711
800
I/O
t
RAC
Time) ns
Access
53.3
53.3
Rev. 1.01 Oct. 1999
45
45
45
45
Direct RDRAM
(Row
b. Mirrored Package
M
KM416RD8AC(D
KM418RD8AC(D)-RG60
KM416RD8AC(D)-RK70
KM416RD8AC(D)-RK80
KM418RD8AC(D)-RK70
KM418RD8AC(D)-RK80
KM4xxRD8AD
SEC KOREA
Part Number
b
)-R
c
G60
™