tc59lm814 TOSHIBA Semiconductor CORPORATION, tc59lm814 Datasheet - Page 23

• Manufacturer Part Number: tc59lm814
• Description: 256mbits Network Fcram1
• Manufacturer: TOSHIBA Semiconductor CORPORATION

MULTIPLE BANK READ TIMING (CL = 3)
MULTIPLE BANK READ TIMING (CL = 4)
(BA0, BA1)
(BA0, BA1)
Command
Command
Bank Add.
Bank Add.
BL = 2
BL = 4
BL = 2
BL = 4
(output)
(output)
(output)
(output)
(output)
(output)
(output)
(output)
DQS
DQS
DQS
DQS
CLK
CLK
CLK
CLK
DQ
DQ
DQ
DQ
Note: “×” is don’t care.
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Bank “a”
Bank “a”
RDAa
RDAa
I
I
RCD
RCD
0
0
I
I
RBD
RBD
I
RC
= 1 cycle
= 1 cycle
to the same bank must be satisfied.
LALa
LALa
= 2 cycles
= 2 cycles
1
×
1
×
I
RC
Bank “b”
Bank “b”
RDAb
RDAb
I
RC
= 5 cycles
2
2
I
CL = 3
CL = 3
RAS
= 5 cycles
I
RAS
CL = 4
CL = 4
= 4 cycles
LALb
LALb
= 4 cycles
3
3
×
×
DESL
DESL
4
4
Qa0 Qa1
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3
CL = 3
CL = 4
Bank “a”
Bank “a”
I
RDAa
RDAa
I
RCD
RCD
5
5
Qa0 Qa1
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3
I
I
RBD
RBD
= 1 cycle
Hi-Z
= 1 cycle
= 2 cycles
= 2 cycles
LALa
LALa
6
×
6
×
Qb0 Qb1
Hi-Z
Bank “c”
Bank “c”
RDAc
RDAc
TC59LM814/06CTG-50,-60
7
7
I
RCD
Qb0 Qb1
I
RCD
CL = 3
CL = 3
I
I
RBD
RBD
Hi-Z
CL = 4
CL = 4
= 1 cycle I
= 1 cycle
LALc
LALc
= 2 cycles
Hi-Z
= 2 cycles
8
×
8
×
Hi-Z
Hi-Z
Bank “d”
Bank “d”
RDAd
RDAd
Hi-Z
RCD
9
9
2005-06-21 23/39
Qa0 Qa1
Qa0 Qa1 Qa2 Qa3
I
CL = 3
RCD
I
I
RBD
RBD
Hi-Z
CL = 4
= 1 cycle
= 1 cycle
LALd
LALd
= 2 cycles
= 2 cycles
10
10
×
×
Qa0 Qa1
Qa0 Qa1 Qa2
Hi-Z
Bank “b”
Bank “b”
RDAb
RDAb
Rev 1.2
11
11
Qc0
Qc0