tc59lm814cft TOSHIBA Semiconductor CORPORATION, tc59lm814cft Datasheet - Page 23

• Manufacturer Part Number: tc59lm814cft
• Description: 4,194,304 / 8,388,608-words X 4 Banks X 16 / 8-bits Network Fcram
• Manufacturer: TOSHIBA Semiconductor CORPORATION

MULTIPLE BANK READ TIMING (CL = 3)
MULTIPLE BANK READ TIMING (CL = 4)
(BA0, BA1)
(BA0, BA1)
Bank Add.
Bank Add.
Command
Command
BL = 2
BL = 4
BL = 2
BL = 4
(output)
(output)
(output)
(output)
(output)
(output)
(output)
(output)
DQS
DQS
DQS
DQS
CLK
CLK
CLK
CLK
DQ
DQ
DQ
DQ
Note: “×” is don’t care.
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Bank “a”
Bank “a”
RDAa
RDAa
I
0
0
RCD
I
RCD
I
I
RBD
I
RBD
RC
= 1 cycle
= 1 cycle
to the same bank must be satisfied.
LALa
LALa
= 2 cycles
= 2 cycles
1
×
1
×
I
I
Bank “b”
Bank “b”
RC
RC
RDAb
RDAb
2
2
= 5 cycles
= 5 cycles
CL = 3
CL = 3
I
I
RAS
RAS
CL = 4
CL = 4
LALb
LALb
3
3
= 4 cycles
= 4 cycles
×
×
DESL
DESL
4
4
Qa0
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3
CL = 3
Qa1
Bank “a”
Bank “a”
CL = 4
RDAa
RDAa
I
5
RCD
5
I
Qa0
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3
I
I
RBD
RCD
RBD
Hi-Z
= 1 cycle
Qa1
= 2 cycles
= 2 cycles
= 1 cycle
LALa
LALa
6
6
×
×
Qb0 Qb1
TC59LM814/06CFT-50,-55,-60
Hi-Z
Bank “c”
Bank “c”
RDAc
RDAc
7
7
I
Qb0 Qb1
I
RCD
RCD
CL = 3
CL = 3
CL = 4
I
I
RBD
RBD
Hi-Z
= 1 cycle
CL = 4
= 1 cycle
LALc
LALc
= 2 cycles
= 2 cycles
Hi-Z
8
×
8
×
Hi-Z
Hi-Z
Bank “d”
Bank “d”
RDAd
RDAd
Hi-Z
9
9
2002-08-19 23/38
I
Qa0 Qa1
Qa0 Qa1 Qa2 Qa3
I
RCD
RCD
CL = 3
CL = 4
I
I
RBD
RBD
Hi-Z
= 1 cycle
= 1 cycle
LALd
LALd
= 2 cycles
= 2 cycles
10
10
×
×
Qa0 Qa1
Qa0 Qa1 Qa2
Hi-Z
Bank “b”
Bank “b”
RDAb
RDAb
11
11
Qc0
Qc0