2sa1955fv TOSHIBA Semiconductor CORPORATION, 2sa1955fv Datasheet
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Manufacturer Part Number
2sa1955fv
Description
Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Available stocks
General Purpose Amplifier Applications
Switching and Muting Switch Application
•
•
Maximum Ratings
Marking
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
Low saturation voltage: V
Large collector current: I
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Characteristics
0.5mm
0.4mm
0.45mm
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
0.45mm
(Ta = 25°C)
C
CE (sat)
@I
= −400 mA (max)
C
= −10 mA/I
(1) = −15 mV (typ.)
2SA1955FV
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
B
C
j
= −0.5 mA
−55~150
Rating
150 *
−400
−15
−12
−50
150
−5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.0015g (typ.)
JEDEC
JEITA
TOSHIBA
VESM
1
2
1.2±0.05
0.8±0.05
1.BASE
2.EMITTER
3.COLLECTOR
2SA1955FV
2-1L1A
2004-06-07
―
―
3
Unit: mm
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2sa1955fv Summary of contents
... V V CBO − CEO − EBO −400 − 150 * 150 °C j −55~150 T °C stg 1 2SA1955FV Unit: mm 1.2±0.05 0.8±0. 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1L1A Weight: 0.0015g (typ.) 2004-06-07 ...
... −1 mA − kHz rms stg − 2SA1955FV Min Typ. Max Unit ⎯ ⎯ −0.1 µA ⎯ ⎯ −0.1 µA ⎯ 300 1000 ⎯ −15 −30 mV ⎯ −110 −250 ⎯ −0.87 − ...
... 3 2SA1955FV 2004-06-07 ...
... P – 200 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) 150 100 100 125 150 AMBIENT TEMPERATURE Ta (°C) 175 4 2SA1955FV 2004-06-07 ...
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2SA1955FV 030619EAA 2004-06-07 ...
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