2sa1955fv TOSHIBA Semiconductor CORPORATION, 2sa1955fv Datasheet - Page 2
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2sa1955fv
Manufacturer Part Number
2sa1955fv
Description
Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA1955FV.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1955FV
Manufacturer:
toshiba
Quantity:
30 000
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
Switching time
Note: h
FE
Characteristics
classification A: 300~600, B: 500~1000
Turn-on time
Storage time
Fall time
(Ta = 25°C)
V
V
CE (sat) (1)
CE (sat) (2)
V
Symbol
BE (sat)
I
I
h
C
R
CBO
EBO
t
t
stg
f
FE
on
t
T
ob
on
f
(Note)
V
V
V
I
I
I
V
V
I
I
C
C
C
B
B1
CB
EB
CE
CE
CB
= −10 mA, I
= −200 mA, I
= −200 mA, I
= −1 mA, V
= −I
= −5 V, I
= −15 V, I
= −2 V, I
= −2 V, I
= −10 V, I
B2
2
= 5 mA
Test Condition
C
C
C
in
B
E
E
= 0
= −10 mA
= −10 mA
B
B
= −1 V
= −0.5 mA
= 0
= 0, f = 1 MHz
= −10 mA
= −10 mA
rms
, f = 1 kHz
Min
300
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−0.87
−110
Typ.
−15
130
280
4.2
0.9
40
45
⎯
⎯
⎯
2SA1955FV
2004-06-07
1000
−250
−0.1
Max
−0.1
−1.2
−30
⎯
⎯
⎯
⎯
⎯
⎯
MHz
Unit
mV
µA
µA
pF
ns
V
Ω