2sa1955fv TOSHIBA Semiconductor CORPORATION, 2sa1955fv Datasheet - Page 2

• Manufacturer Part Number: 2sa1955fv
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
Switching time
Note: h
FE
Characteristics
classification A: 300~600, B: 500~1000
Turn-on time
Storage time
Fall time
(Ta = 25°C)
V
V
CE (sat) (1)
CE (sat) (2)
V
Symbol
BE (sat)
I
I
h
C
R
CBO
EBO
t
t
stg
f
FE
on
t
T
ob
on
f
(Note)
V
V
V
I
I
I
V
V
I
I
C
C
C
B
B1
CB
EB
CE
CE
CB
= −10 mA, I
= −200 mA, I
= −200 mA, I
= −1 mA, V
= −I
= −5 V, I
= −15 V, I
= −2 V, I
= −2 V, I
= −10 V, I
B2
2
= 5 mA
Test Condition
C
C
C
in
B
E
E
= 0
= −10 mA
= −10 mA
B
B
= −1 V
= −0.5 mA
= 0
= 0, f = 1 MHz
= −10 mA
= −10 mA
rms
, f = 1 kHz
Min
300
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−0.87
−110
Typ.
−15
130
280
4.2
0.9
40
45
⎯
⎯
⎯
2SA1955FV
2004-06-07
1000
−250
−0.1
Max
−0.1
−1.2
−30
⎯
⎯
⎯
⎯
⎯
⎯
MHz
Unit
mV
µA
µA
pF
ns
V
Ω