2sc5886 TOSHIBA Semiconductor CORPORATION, 2sc5886 Datasheet - Page 2

• Manufacturer Part Number: 2sc5886
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time
Characteristics
C5886
Figure 1 Switching Time Test Circuit & Timing Chart
Rise time
Storage time
Fall time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
I
B1
Duty cycle < 1%
20 μs
V
V
V
Symbol
h
h
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
EBO
t
stg
t
t
r
f
(1)
(2)
I
B2
V
V
I
V
V
I
I
See Figure 1.
V
I
C
C
C
B1
Input
CB
EB
CE
CE
CC
= 10 mA, I
= 1.6 A, I
= 1.6 A, I
2
= 32 mA, I
= 7 V, I
= 100 V, I
= 2 V, I
= 2 V, I
∼ − 24 V, R
I
I
B1
B2
Test Condition
B
B
C
C
C
B
= 32 mA
= 32 mA
B2
= 0
= 0.5 A
= 1.6 A
L
E
= 0
= 15 Ω
V
= 0
= −53 mA
CC
Output
Min
400
200
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
560
63
55
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-10
2SC5886
1000
0.22
1.10
Max
100
100
⎯
⎯
⎯
⎯
⎯
Unit
nA
nA
ns
V
V
V