2sc5886 TOSHIBA Semiconductor CORPORATION, 2sc5886 Datasheet - Page 3

• Manufacturer Part Number: 2sc5886
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.005
0.003
0.001
0.05
0.03
0.01
0.5
0.3
0.1
0.001
6
4
2
0
3
1
2
1
0
0
0
70 mA
Common emitter
I C /I B = 50
Common emitter
V CE = 2 V
0.003
50 mA
Collector-emitter voltage V
Base-emitter voltage V
0.01
30 mA
Tc = 100°C
2
Collector current I
Tc = 100°C
0.5
0.03
V
20 mA
CE (sat)
I
I
C
C
– V
– V
0.1
4
25°C
CE
BE
– I
0.3
C
C
−55°C
25°C
10 mA
I B = 1 mA
5 mA
2 mA
0
1
BE
Common emitter
Tc = 25°C
CE
(A)
−55°C
6
1
(V)
(V)
3
1.5
10
8
3
30000
10000
5000
3000
1000
0.05
0.03
0.01
0.05
0.03
0.01
500
300
100
0.5
0.3
0.1
0.5
0.3
0.1
50
30
10
0.001
30
10
0.001
10
0.001
5
3
1
5
3
1
Common emitter
Tc = 25°C
Common emitter
V CE = 2 V
Common emitter
I C /I B = 50
Tc = −55°C
0.003
0.003
2 A
1 A
0.003
25°C
0.01
0.01
Collector current I
Collector current I
0.01
Base current I
−55°C
0.03
100°C
0.03
V
BE (sat)
0.03
V
h
25°C
FE
CE
I C = 2.5 A
0.1
0.1
– I
– I
0.1
– I
C
B
B
0.3
0.3
C
C
C
(A)
0.3
(A)
(A)
1
1
Tc = 100°C
1
3
3
2006-11-10
2SC5886
10
10
3