2sc5930 TOSHIBA Semiconductor CORPORATION, 2sc5930 Datasheet - Page 2

• Manufacturer Part Number: 2sc5930
• Description: Silicon Npn Triple Diffused Type Pct Process High-speed And High-voltage Switching Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time
Figure 1
I
B1
Duty cycle < 1%
Characteristics
20 μs
Switching Time Test Circuit &
Timing Chart
C5930
Rise time
Storage time
Fall time
I
B2
Input
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
I
I
B1
B2
V
V
V
V
V
Symbol
h
h
(BR) CBO
(BR) CEO
CC
CE (sat)
BE (sat)
I
I
FE
FE
CBO
EBO
t
stg
t
t
r
f
(1)
(2)
Output
V
V
I
I
V
V
I
I
See Figure 1.
V
I
C
C
C
C
B1
CB
EB
CE
CE
CC
= 1 mA, I
= 10 mA, I
= 0.6 A, I
= 0.6 A, I
2
= 20 mA, −I
= 7 V, I
= 600 V, I
= 5 V, I
= 5 V, I
≈ 200 V, R
Test Condition
B
B
B
C
C
C
B
= 0
= 0.075 A
= 0.075 A
= 0
= 1 mA
= 0.2 A
E
= 0
L
= 0
B2
= 667 Ω
= 50 mA
Min
600
285
30
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-13
2SC5930
Max
100
100
100
100
1.0
1.3
0.5
3.0
0.3
⎯
⎯
Unit
μA
μA
μs
V
V
V
V