2sc5930 TOSHIBA Semiconductor CORPORATION, 2sc5930 Datasheet - Page 3

• Manufacturer Part Number: 2sc5930
• Description: Silicon Npn Triple Diffused Type Pct Process High-speed And High-voltage Switching Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.03
0.01
0.8
0.6
0.4
0.2
0.3
0.1
1.6
1.2
0.8
0.4
30
10
0.001
1
0
3
1
2
0
0
0
140
Common emitter
β = 8
Common emitter
V CE = 5 V
0.003
120
0.4
Collector-emitter voltage V
Base-emitter voltage V
0.01
0.4
Collector current I
Ta = 100°C
0.8
0.03
Ta = 100°C
V
CE (sat)
I
I
C
C
– V
– V
1.2
0.1
0.8
25
CE
25
BE
− I
0.3
−55
C
C
1.6
−55
BE
Common emitter
Ta = 25°C
CE
(A)
1.2
1
(V)
(V)
I B = 5 mA
2
100°C
100
80
60
40
20
10
3
2.4
1.6
10
3
3000
1000
0.03
0.01
300
100
0.3
0.1
30
10
0.001
30
10
0.001
3
1
3
1
Common emitter
V CE = 5 V
Common emitter
β = 8
0.003
0.003
Ta = 100°C
0.01
0.01
Collector current I
Collector current I
Ta = −55°C
25
25
0.03
0.03
V
BE (sat)
h
−55
FE
100
0.1
0.1
− I
− I
C
100°C
0.3
0.3
C
C
C
(A)
(A)
1
1
−55
3
3
2006-11-13
2SC5930
10
10