2sc6026ct TOSHIBA Semiconductor CORPORATION, 2sc6026ct Datasheet
2sc6026ct
Manufacturer Part Number
2sc6026ct
Description
Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SC6026CT.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC6026CT
Manufacturer:
toshiba
Quantity:
30 000
General Purpose Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
High voltage and high current
Excellent h
High h
Complementary to 2SA2154CT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
2
1
FE
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
( ) marking symbol
FE
Characteristics
Characteristics
FE
classification Y (F): 120~240, GR (H): 200~400
7F
linearity : h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Type Name
3
: V
:
h
h
FE
FE
FE
CEO
Rank
= 120 to 400
(I
C
= 50V, I
= 0.1 mA)/h
(Ta = 25°C)
(Ta = 25°C)
P
h
2SC6026CT
V
C
FE
C
Symbol
Symbol
V
V
V
CE (sat)
I
I
= 100mA (max)
(Note1)
T
CBO
EBO
C
CBO
CEO
EBO
I
I
T
(Note)
f
stg
C
B
T
ob
j
FE
(I
C
V
V
V
I
V
V
C
= 2 mA)= 0.95 (typ.)
CB
EB
CE
CE
CB
−55 to 150
= 100 mA, I
Rating
= 60 V, I
= 5 V, I
= 6 V, I
= 10 V, I
= 10 V, I
100
100
150
60
50
30
5
1
C
C
Test Condition
E
C
E
= 0
= 2 mA
B
= 0
= 0, f = 1 MHz
= 1 mA
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.75 mg (typ.)
JEDEC
JEITA
TOSHIBA
CST3
0.15±0.03
120
Min
60
⎯
⎯
⎯
⎯
１
0.6±0.05
0.5±0.03
0.35±0.02
３
Typ.
0.95
0.1
⎯
⎯
⎯
⎯
1.BASE
2.EMITTER
3.COLLECTOR
２
2SC6026CT
2-1J1A
0.05±0.03
2009-04-13
―
―
0.25
Max
400
0.1
0.1
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
⎯
V
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2sc6026ct Summary of contents
Page 1
... 100 mA (sat MHz 2SC6026CT 0.6±0.05 0.5±0.03 ３ １ ２ 0.35±0.02 0.05±0.03 0.15±0. 1.BASE mA 2.EMITTER CST3 3.COLLECTOR mA JEDEC ― °C JEITA ― °C TOSHIBA 2-1J1A Weight: 0 ...
Page 2
... AMBIENT TEMPERATURE Ta (°C) 2 2SC6026CT hFE - IC 25℃ -25℃ VCE=6V VCE= 100 1000 COLLECTOR CURRENT IC (mA) VBE(sat COMMON EMITTER IC/ IB=10 25℃ -25℃ Ta=100℃ 100 1000 ...
Page 3
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SC6026CT 2009-04-13 ...