2sc6026ct TOSHIBA Semiconductor CORPORATION, 2sc6026ct Datasheet - Page 2
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2sc6026ct
Manufacturer Part Number
2sc6026ct
Description
Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SC6026CT.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC6026CT
Manufacturer:
toshiba
Quantity:
30 000
10000
1000
120
100
0.01
100
80
60
40
20
0.1
0.1
10
0
1
1
0.1
0
0
2.0
Ta=100℃
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER
VCE=6V
1
COLLECTOR CURRENT IC (mA)
0.2
BASE-EMITTER VOLTAGE VBE (V)
1.5
Ta=100℃
COMMON EMITTER Ta=25℃
1
2
0.4
25℃
VCE(sat) - IC
25℃
IC - VCE
IB - VBE
1.0
0.6
3
10
COMMON EMITTER
IC/IB=10
0.8
4
IB=0.1mA
-25℃
-25℃
0.7
5
1
100
0.2
0.5
0.3
1.2
6
1000
1.4
7
2
1000
150
140
130
120
110
100
0.1
100
90
80
70
60
50
40
30
20
10
10
10
0
1
0.1
0.1
0
20
COLLECTOR CURRENT IC (mA)
Ta=100℃
COMMON EMITTER
AMBIENT TEMPERATURE Ta (°C)
Ta=100℃
Mounted on FR4 board
(10 mm × 10 mm × 1 mmt)
VCE=6V
VCE=1V
COLLECTOR CURRENT IC (mA)
40
1
1
25℃
VBE(sat) - IC
60
hFE - IC
25℃
PC - Ta
-25℃
80
10
10
COMMON EMITTER
IC/ IB=10
-25℃
100 120 140 160
100
2SC6026CT
100
2009-04-13
1000
1000