hn7g10fe TOSHIBA Semiconductor CORPORATION, hn7g10fe Datasheet - Page 2

• Manufacturer Part Number: hn7g10fe
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
Q2
Switching Time Test Circuit
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Note 2: h
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Switching time test circuit
(transistor)
(MOSFET)
2.5 V
0
10 µ S
V
FE
Characteristic
Characteristic
IN
classification A: 300~600, B: 500~1000
Electrical Characteristics
IN
Electrical Characteristics
Turn-on time
Turn-off time
I
D
V
DD
OUT
V
V
h
V
R
CE (sat) (1)
CE (sat) (2)
V
FE
Symbol
Symbol
(BR) DSS
DS (ON)
BE (sat)
⎪ Y
I
I
I
I
C
C
C
CBO
EBO
GSS
DSS
V
t
t
(Note 2) V
oss
on
off
rss
V
D.U. < = 1%
V
(Z
Common source
Ta = 25°C
iss
th
fs
DD
IN
⎪
out
: t
= 3 V
r
= 50 Ω )
, t
f
V
V
I
I
I
V
I
V
V
V
I
V
V
V
V
V
< 5 ns
C
C
C
D
D
CB
EB
CE
GS
DS
DS
DS
DS
DS
DS
DD
DD
= 10 mA, I
= 200 mA, I
= 200 mA, I
= 100 µ A, V
= 10 mA, V
(Ta = 25°C)
(Ta = 25°C)
= 5 V, I
= 15 V, I
= 2 V, I
= 10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, I
= 3 V, I
2
C
C
D
D
D
D
Test Condition
Test Condition
B
GS
GS
GS
E
(b) V
(c) V
GS
= 0
= 10 mA
= 0.1 mA
= 10 mA
B
B
DS
GS
= 10 mA, V
= 10 mA, V
GS
= 0.5 mA
= 0
= 10 mA
= 10 mA
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 2.5 V
V
V
= 0
= 0
= 0
OUT
IN
GS
DS
GS
GS
= 0~2.5 V
= 0~2.5 V
V
DS (ON)
2.5 V
V
DD
0
Min
Min
300
0.7
20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
t
90%
r
Typ.
0.87
Typ.
11.0
0.16
0.19
110
3.3
9.3
15
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
t
90%
HN7G10FE
off
2005-03-29
1000
Max
Max
250
0.1
0.1
1.2
1.3
30
12
t
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
f
10%
Unit
Unit
mV
mS
µ A
µ A
µ A
µ A
pF
pF
pF
µ s
V
V
V
Ω