hn7g10fe TOSHIBA Semiconductor CORPORATION, hn7g10fe Datasheet - Page 3

• Manufacturer Part Number: hn7g10fe
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 (Transistor)
1000
1000
500
300
100
500
300
100
1.0
0.8
0.6
0.4
0.2
50
30
10
50
30
10
5
3
1
0
0.1
5
3
1
0.0
0
Common emitter
IC/IB = 20
0.3
Ta = 100°C
Collector-emitter voltage V
6
Base-emitter voltage V
1
0.4
Collector current I
1
Ta = 100°C
5
4
V
3
25
CE (sat)
2
I
I
C
C
– V
– V
0.8
10
−25
3
CE
BE
– I
3
30
C
C
−25
25
Common emitter
Ta = 25°C
BE
Common emitter
VCE = 2 V
(mA)
CE
100
1.2
2
IB = 0.5 mA
(V)
4
(V)
300
1
1000
1.6
5
3
10000
5000
3000
1000
500
300
100
100
0.5
0.3
0.1
50
30
10
50
30
10
50
30
10
5
3
1
5
3
1
0.1
0.1
0.1
Common emitter
IC/IB = 20
Ta = 25°C
0.3
0.3
0.3
Collector-base voltage V
Collector current I
Collector current I
1
1
Ta = 100°C
1
−25
3
V
25
C
3
BE (sat)
h
ob
FE
10
– V
3
– I
10
CB
– I
C
30
C
C
C
10
30
(mA)
(mA)
CB
Common emitter
VCE = 2 V
100
IE = 0 A
f = 1 MHz
Ta = 25°C
100
(V)
30
HN7G10FE
300
2005-03-29
300
1000
500
100