ssm6n37fe TOSHIBA Semiconductor CORPORATION, ssm6n37fe Datasheet
ssm6n37fe
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ssm6n37fe Summary of contents
Page 1
... T 150 ch −55 to 150 °C T stg and the significant change 2 × 6) Equivalent Circuit (top view SSM6N37FE 1.6±0.05 1.2±0. 1.Source1 2.Gate1 V 3.Drain2 ES6 JEDEC ― JEITA ― TOSHIBA 2-2N1D Weight: 3.0 mg (typ.) in 2009-11-12 単位 4.Source2 5 ...
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... DD Precaution Let V be the voltage applied between gate and source that causes the drain current (I th SSM6N37FE). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Do not use this device under avalanche mode. It may cause the device to break down. ...
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... Common Source °C 0.01 0.6 0.8 1.0 ( =100mA Common Source 25 ° 100 °C − 25 ° (V) GS – Ta 100m A / 4.5 V 100 150 3 SSM6N37FE I – 100 ° − 25 °C 25 °C 0.1 Common Source 1.0 2.0 Gate-source voltage V ( – (ON Common Source Ta = 25° ...
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... D DS 1000 100 C iss C oss C rss 10 100 ( × 100 120 140 160 4 SSM6N37FE I – °C 10 Common Source Ta =100 ° −25 °C S 0.1 0 –0.5 –1.0 Drain-source voltage V ( – Common Source ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N37FE 2009-11-12 ...